| Type | Transistor Silicon NPN | |
| Case | SOT23 | |
| Manufacturer | Hitachi | |
| Vbr CEO | 10 | |
| Max. PD (W) | 150m | |
| hfe | 80 | |
| Ic Max. (A) | 50m | |
| Polarity | NPN | |
| Trans. Freq (Hz) Min. | 1.3G | |
| @VCE (test) (V) | 4.0 | |
| @Ic (A) | 5.0m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 0.11 W | |
| Maximum Collector-Base Voltage |Vcb| | 15 V | |
| Maximum Collector Current |Ic max| | 0.05 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Transition Frequency (ft): | 550 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SKU | 543016 | |