Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Mitsubishi |
Case |
XM5 |
Vbr CBO |
35 |
Vbr CEO |
17 |
Max. PD (W) |
10 |
Max. hFE |
180 |
Min hFE |
10 |
Ic Max. (A) |
1.0 |
@Ic (test) (A) |
0.1 |
Icbo Max. @Vcb Max. (A) |
300u |
Polarity |
NPN |
Derate Above 25°C |
66m |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
10i |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
10 W |
Maximum Collector-Base Voltage |Vcb| |
35 V |
Maximum Emitter-Base Voltage |Veb| |
3 V |
Maximum Collector Current |Ic max| |
1 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Transition Frequency (ft): |
520 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
366373 |