2SC302M

SKU: 2SC302M

2SC302M Transistor Silicon NPN CASE: TO18 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Equivalent	2SC302
Type	Transistor Silicon NPN
Case	TO18
Manufacturer	Mitsubishi
Vbr CBO	50
Vbr CEO	20
Max. PD (W)	260m
C(ob) (F)	3.5p
Derate (Amb) (W/°C)	2.0m
hfe	85
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	10n
Polarity	NPN
Trans. Freq (Hz) Min.	420M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	100u
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.36 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	185 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	210 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	552298

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