2SC3059

SKU: 2SC3059

2SC3059 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu

Datasheet

2SC3059 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Fujitsu
Vbr CBO	1.2k
Vbr CEO	850
Max. PD (W)	100
t(f) Max. (S)	300n
Max. hFE	30
Min hFE	10
Ic Max. (A)	2.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	500n
R(sat) (Û)	1.5
Derate Above 25°C	667m
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	1200 V
Maximum Collector-Emitter Voltage \|Vce\|	850 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	344004

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