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2SC3060
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2SC3060

SKU: 2SC3060
2SC3060 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Datasheet
2SC3060 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 1.2k
Vbr CEO 850
Max. PD (W) 150
t(f) Max. (S) 300n
Max. hFE 30
Min hFE 10
Ic Max. (A) 5.0
@Ic (test) (A) 2
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 500n
R(sat) (Û) 750m
Derate Above 25°C 1.0
Oper. Temp (°C) Max. 175
@VCE (V) 5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 1200 V
Maximum Collector-Emitter Voltage |Vce| 850 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 120
SKU 344005
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