The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC3063

2SC3063

SKU: 2SC3063
2SC3063 Transistor Silicon NPN CASE: TO126 MAKE: Matsushita Electronics
Datasheet
2SC3063 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Matsushita Electronics
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 1.2
Max. hFE 250
Min hFE 50
Ic Max. (A) 100m
@Ic (test) (A) 5.0m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 9.6m
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 150
@VCE (V) 50
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.25 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 350
SKU 115279
Back