The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC307
View detailed images (13)

2SC307

SKU: 2SC307
2SC307 Transistor Silicon NPN CASE: TO39 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Mitsubishi
Vbr CBO 80
Vbr CEO 40
Max. PD (W) 570m
C(ob) (F) 10p
Derate (Amb) (W/°C) 4.5m
t(f) Max. (S) 150n
hfe 85
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Tr Max. (s) 150n
t(stor) Max. (S) 300n
Trans. Freq (Hz) Min. 250M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 85
SKU 765185
Back