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2SC3072B
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2SC3072B

SKU: 2SC3072B
2SC3072B Transistor Silicon NPN CASE: TO218 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 20
Max. PD (W) 1.0
Max. hFE 330
Min hFE 200
Ic Max. (A) 5.0
@Ic (test) (A) .50
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 8.0m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 765183
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