2SC3072C

SKU: 2SC3072C

2SC3072C Transistor Silicon NPN CASE: TO218 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	Toshiba
Vbr CBO	50
Vbr CEO	20
Max. PD (W)	1.0
Max. hFE	450
Min hFE	300
Ic Max. (A)	5.0
@Ic (test) (A)	.50
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Derate Above 25°C	8.0m
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	40 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	300
SKU	765182

Back