The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC3073O
View detailed images (8)

2SC3073O

SKU: 2SC3073O
2SC3073O Transistor Silicon NPN CASE: TO252 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 1.0
Max. hFE 140
Min hFE 70
Ic Max. (A) 3.0
@Ic (test) (A) .50
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 8.0m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 35 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 765181
Back