2SC3073Y

2SC3073Y

SKU: 2SC3073Y
2SC3073Y Transistor Silicon NPN CASE: TO252 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 1.0
Max. hFE 240
Min hFE 120
Ic Max. (A) 3.0
@Ic (test) (A) .50
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 8.0m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 35 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 765180
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