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2SC3076O
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2SC3076O

SKU: 2SC3076O
2SC3076O Transistor Silicon NPN CASE: TO251 MAKE: Toshiba
Product specifications
Equivalent 2SC3076
Type Transistor Silicon NPN
Case TO251
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 10
Max. hFE 240
Min hFE 70
Ic Max. (A) 2.0
@Ic (test) (A) 0.5
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 395229
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