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2SC308
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2SC308

SKU: 2SC308
2SC308 Transistor Silicon NPN CASE: TO39 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Mitsubishi
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 800m
C(ob) (F) 10p
Derate (Amb) (W/°C) 4.5m
hfe 65
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 90M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 45 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 765171
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