| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO39 |
| Manufacturer |
Mitsubishi |
| Vbr CBO |
35 |
| Vbr CEO |
17 |
| Max. PD (W) |
10 |
| Max. hFE |
180 |
| Min hFE |
10 |
| Ic Max. (A) |
1.0 |
| @Ic (test) (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
300u |
| Polarity |
NPN |
| Derate Above 25°C |
15 |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
10 |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
10 W |
| Maximum Collector-Base Voltage |Vcb| |
35 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
520 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
60 |
| SKU |
81085 |