2SC3119

SKU: 2SC3119

2SC3119 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Toshiba
Vbr CBO	25
@Freq. (test)	800M
@Ic (A)	-2m
Mat.	Silicon Logic
Noise Fig.	4.0
Oper. Gain Typ (S21)	12
f(osc) Max. (Hz)	600M
Polarity	NPN
PD Max. (W)	150m
S11 Deg. (Typ)	-55
S11 Mag Typ.	52
S22 Deg. Typ.	5.0
S22 Mag Typ.	1.9
@VDS (VCE) (test) (V)	10
Coll. (or drain) Current Max.	20m
@Freq. (test)	800M
@VCE (test)	12
Oper. Temp (°C) Max.	125
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.02 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	0.5 pF
Transition Frequency (ft):	450 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SMD Transistor Code	HA
SKU	585220

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