2SC3120

SKU: 2SC3120

2SC3120 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2SC3120 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SC3120-SMD
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Toshiba
Vbr CBO	30
@Freq. (test)	800M
@Ic (A)	2.0m
@Ic (A)	2.0m
Mat.	Silicon Logic
Noise Fig.	8.0
Oper. Gain Typ (S21)	100
f(osc) Max. (Hz)	1.5G
Polarity	NPN
PD Max. (W)	150m
S11 Deg. (Typ)	-19
S11 Mag Typ.	25
S22 Deg. Typ.	-131
S22 Mag Typ.	79
@VDS (VCE) (test) (V)	10
Coll. (or drain) Current Max.	50m
@Freq. (test)	800M
@VCE (test)	10
Oper. Temp (°C) Max.	125
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	0.9 pF
Transition Frequency (ft):	1500 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SMD Transistor Code	HB
SKU	81090

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