2SC3123

SKU: 2SC3123

2SC3123 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba

Datasheet

2SC3123 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Toshiba
Vbr CBO	30
Vbr CEO	20
Max. PD (W)	150m
C(ob) (F)	.50p
Derate (Amb) (W/°C)	1.5m
hfe	40
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	1.4G
@VCE (test) (V)	10
Oper. Temp (°C) Max.	125
@Ic (A)	5.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	18 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	180 °C
Collector Capacitance (Cc)	0.5 pF
Transition Frequency (ft):	900 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SMD Transistor Code	HE
SKU	344023

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