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2SC3125
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2SC3125

SKU: 2SC3125
2SC3125 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba
Datasheet
2SC3125 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 150m
C(ob) (F) 1.6p
Derate (Amb) (W/°C) 1.5m
hfe 20
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 600M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 180 °C
Collector Capacitance (Cc) 1.6 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code HH
SKU 344025
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