2SC317H

SKU: 2SC317H

2SC317H Transistor Silicon NPN CASE: TO1 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO1
Manufacturer	Hitachi
Vbr CBO	70
Vbr CEO	50
Max. PD (W)	350m
Derate (Amb) (W/°C)	2.3m
hfe	80
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	.10u
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	175
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	70 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	590778

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