2SC3211A

SKU: 2SC3211A

2SC3211A Transistor Silicon NPN CASE: SOT199 MAKE: Matsushita Electronics

Datasheet

2SC3211A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT199
Manufacturer	Matsushita Electronics
Vbr CBO	900
Vbr CEO	500
Max. PD (W)	70
t(f) Max. (S)	1.0u
Min hFE	15
Ic Max. (A)	5.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	3.0u
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	70 W
Maximum Collector-Base Voltage \|Vcb\|	900 V
Maximum Collector-Emitter Voltage \|Vce\|	500 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	551360

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