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2SC3233
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2SC3233

SKU: 2SC3233
2SC3233 Transistor Silicon NPN CASE: TO218 MAKE: Toshiba
Datasheet
2SC3233 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Toshiba
Vbr CBO 500
Vbr CEO 400
Max. PD (W) 20
t(f) Max. (S) 1.0u
Max. hFE 80
Min hFE 20
Ic Max. (A) 2.0
@Ic (test) (A) 800m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 160m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 344049
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