Weight |
0.01 kg
|
Case |
MT200 |
Type |
Transistor Silicon NPN |
Manufacturer |
ISC |
Vbr CBO |
230 |
Vbr CEO |
230 |
Max. PD (W) |
200 |
t(f) Max. (S) |
500n- |
Min hFE |
40 |
Ic Max. (A) |
17 |
@Ic (test) (A) |
5.0 |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
NPN |
Derate Above 25°C |
1.6 |
Trans. Freq (Hz) Min. |
60M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
200 W |
Maximum Collector-Base Voltage |Vcb| |
230 V |
Maximum Collector-Emitter Voltage |Vce| |
230 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
17 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Transition Frequency (ft): |
60 MHz |
Forward Current Transfer Ratio (hFE), MIN |
50 |
SKU |
16663 |