Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
TO92L |
Vbr CBO |
80 |
Vbr CEO |
80 |
Max. PD (W) |
900m |
C(ob) (F) |
30p |
Derate (Amb) (W/°C) |
7.2m |
hfe |
70 |
Ic Max. (A) |
2.0 |
Icbo Max. @Vcb Max. (A) |
1.0u |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
100M |
@VCE (test) (V) |
2.0 |
Oper. Temp (°C) Max. |
150 |
@Ic (A) |
.50 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.9 W |
Maximum Collector-Base Voltage |Vcb| |
80 V |
Maximum Collector-Emitter Voltage |Vce| |
80 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
2 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Collector Capacitance (Cc) |
30 pF |
Transition Frequency (ft): |
100 MHz |
Forward Current Transfer Ratio (hFE), MIN |
70 |
SKU |
81122 |