| Type | Transistor Silicon NPN | |
| Case | TO131 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 16 | |
| Vbr CEO | 25 | |
| Max. PD (W) | 500m | |
| C(ob) (F) | 4.0p | |
| Derate (Amb) (W/°C) | 4.0m | |
| hfe | 20 | |
| Ic Max. (A) | 100m | |
| Icbo Max. @Vcb Max. (A) | 100u | |
| Polarity | NPN | |
| @VCE (test) (V) | 10 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 50m | |
| Pinout Equivalence Number | 4-32 | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 0.5 W | |
| Maximum Collector-Base Voltage |Vcb| | 36 V | |
| Maximum Collector Current |Ic max| | 0.1 A | |
| Max. Operating Junction Temperature (Tj) | 135 °C | |
| Transition Frequency (ft): | 2500 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SKU | 764922 | |