The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC3369
View detailed images (1)

2SC3369

SKU: 2SC3369
2SC3369 Transistor Silicon NPN CASE: TO131 MAKE: Matsushita Electronics
Datasheet
2SC3369 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO131
Manufacturer Matsushita Electronics
Vbr CBO 25
Vbr CEO 16
Max. PD (W) 1.0
Min hFE 20
Ic Max. (A) 300
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 30u
Polarity NPN
Derate Above 25°C 8.0m
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 4-32
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 3000 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 344087
Back