2SC3376

SKU: 2SC3376

2SC3376 Transistor Silicon NPN CASE: TO218 MAKE: Toshiba

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2SC3376 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	Toshiba
Vbr CBO	900
Vbr CEO	800
Max. PD (W)	60
t(f) Max. (S)	1.0u
Min hFE	10
Ic Max. (A)	3.0
@Ic (test) (A)	.80
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	.48
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	900 V
Maximum Collector-Emitter Voltage \|Vce\|	800 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	10
SKU	81131

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