| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
Standard |
| Manufacturer |
Mitsubishi |
| Vbr CBO |
20 |
| @Freq. (test) |
520M |
| @Ic (A) |
600m |
| @Ic (A) |
2.8 |
| Mat. |
Silicon Logic |
| Oper. Gain Typ (S21) |
50 |
| Oper. Pwr Out Typ. |
3.2 |
| f(osc) Max. (Hz) |
520M |
| Polarity |
NPN |
| PD Max. (W) |
10 |
| S11 Deg. (Typ) |
-1.9 |
| S11 Mag Typ. |
1.8 |
| S22 Deg. Typ. |
-3.0 |
| S22 Mag Typ. |
6.0 |
| @VDS (VCE) (test) (V) |
7.2 |
| Coll. (or drain) Current Max. |
1.5 |
| @Freq. (test) |
520M |
| @VCE (test) |
7.2 |
| Oper. Temp (°C) Max. |
175 |
| Pinout Equivalence Number |
4-32 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
3 W |
| Maximum Collector-Base Voltage |Vcb| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
3 V |
| Maximum Collector Current |Ic max| |
1.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
520 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
344090 |