The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC3421Y
View detailed images (13)

2SC3421Y

SKU: 2SC3421Y
2SC3421Y Transistor Silicon NPN CASE: TO126 MAKE: Toshiba
Price:
£4.79 Inc. VAT (£3.99 Ex. VAT)
£4.79 Inc. VAT (£3.99 Ex. VAT)
Qty
  • 5 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Toshiba
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 1.5
Max. hFE 240
Min hFE 120
Ic Max. (A) 1.0
@Ic (test) (A) .10
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 12m
Trans. Freq (Hz) Min. 120M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 115293
Back