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2SC3429
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2SC3429

SKU: 2SC3429
2SC3429 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba
Datasheet
2SC3429 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Toshiba
Vbr CBO 17
@Freq. (test) 1.0G
@Ic (A) 5.0m
@Ic (A) 20m
Mat. Silicon Logic
Noise Fig. 1.7
Oper. Gain Typ (S21) 10
f(osc) Max. (Hz) 5.0G
Polarity NPN
PD Max. (W) 150m
S11 Deg. (Typ) 5.0
S11 Mag Typ. 37
S22 Deg. Typ. -21
S22 Mag Typ. 78
@VDS (VCE) (test) (V) 10
Coll. (or drain) Current Max. 70m
@Freq. (test) 1.0G
@VCE (test) 10
Oper. Temp (°C) Max. 125
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 17 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Collector Current |Ic max| 0.07 A
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SMD Transistor Code ME
SKU 115294
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