2SC3508

SKU: 2SC3508

2SC3508 Transistor Silicon NPN CASE: SOT199 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT199
Manufacturer	Matsushita Electronics
Vbr CEO	800
Max. PD (W)	80
Min hFE	7.0
Ic Max. (A)	6.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	640m
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	800 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	550558

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