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2SC3599E
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2SC3599E

SKU: 2SC3599E
2SC3599E Transistor Silicon NPN CASE: TO126 MAKE: Sanyo Semiconductor
Product specifications
Equivalent 2SC3599
Type Transistor Silicon NPN
Case TO126
Manufacturer Sanyo Semiconductor
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 8.0
Max. hFE 200
Min hFE 100
Ic Max. (A) 300m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 500M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 8 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 2.9 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 593267
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