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2SC360
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2SC360

SKU: 2SC360
2SC360 Transistor Silicon NPN CASE: TO18 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 18
Max. PD (W) 250m
C(ob) (F) 7p
hfe 100
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 584674
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