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2SC3601E
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2SC3601E

SKU: 2SC3601E
2SC3601E SemiConductor - CASE: Standard MAKE: Generic
+ VAT 20% for UK purchases
Product specifications
Case TO126
Type Transistor Silicon NPN
Manufacturer SANJ
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 7.0
Max. hFE 200
Min hFE 100
Ic Max. (A) 150m
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 400M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 7 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2.5 pF
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 764725