The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC3636
View detailed images (12)

2SC3636

SKU: 2SC3636
2SC3636 Transistor Silicon NPN CASE: TO247 MAKE: Sanyo Semiconductor
Datasheet
2SC3636 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO247
Manufacturer Sanyo Semiconductor
Vbr CBO 900
Vbr CEO 500
Max. PD (W) 80
t(f) Max. (S) 200n
Min hFE 8.0
Ic Max. (A) 7.0
@Ic (test) (A) 800m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Collector-Emitter Voltage |Vce| 500 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 85
SKU 20655
Back