| 2SC3659 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | Hitachi | |
| Vbr CEO | 1.7k | |
| Max. PD (W) | 50 | |
| t(f) Max. (S) | 0.5u | |
| Ic Max. (A) | 5.0 | |
| Icbo Max. @Vcb Max. (A) | 500u | |
| Polarity | NPN | |
| Oper. Temp (°C) Max. | 140 | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 50 W | |
| Maximum Collector-Base Voltage |Vcb| | 1700 V | |
| Maximum Collector-Emitter Voltage |Vce| | 800 V | |
| Maximum Collector Current |Ic max| | 5 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 30 | |
| SKU | 116086 | |