2SC367

SKU: 2SC367

2SC367 Transistor Silicon NPN CASE: TO92 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	20
Max. PD (W)	300m
C(ob) (F)	10p
Derate (Amb) (W/°C)	3.0m
hfe	70
Ic Max. (A)	400m
Icbo Max. @Vcb Max. (A)	500n
Polarity	NPN
Trans. Freq (Hz) Min.	120M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	125
@Ic (A)	10m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	115313

Back