2SC367G

2SC367G

SKU: 2SC367G
2SC367G Transistor Silicon NPN CASE: TO98-1 MAKE: Generic
Product specifications
Equivalent 2SC367GY
Type Transistor Silicon NPN
Case TO98-1
Manufacturer Generic
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 400m
C(ob) (F) 10p
Derate (Amb) (W/°C) 4.0m
hfe 70
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 125
@Ic (A) 100m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 764655
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