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2SC3757
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2SC3757

SKU: 2SC3757
2SC3757 Transistor Silicon NPN CASE: SOT23 MAKE: Matsushita Electronics
Datasheet
2SC3757 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Matsushita Electronics
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 200m
C(ob) (F) 6.0p
t(on) Delay (S) 17n-
Derate (Amb) (W/°C) 1.6m
hfe 60
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
t(stor) Max. (S) 10n-
Trans. Freq (Hz) Min. 450M-
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 344197
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