2SC3808

SKU: 2SC3808

2SC3808 Transistor Silicon NPN CASE: TO126 MAKE: Sanyo Semiconductor

Datasheet

2SC3808 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO126
Manufacturer	Sanyo Semiconductor
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	15
t(f) Max. (S)	3.5u+
Max. hFE	3.2k
Min hFE	800
Ic Max. (A)	2.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Tr Max. (s)	230n
Trans. Freq (Hz) Min.	170M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	24 pF
Transition Frequency (ft):	170 MHz
Forward Current Transfer Ratio (hFE), MIN	800
SKU	116009

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