Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Sanyo Semiconductor |
Case |
TO126F |
Vbr CBO |
200 |
Vbr CEO |
200 |
Max. PD (W) |
7.0 |
Max. hFE |
320 |
Min hFE |
40 |
Ic Max. (A) |
200m |
@Ic (test) (A) |
10m |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
300M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
10 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
7 W |
Maximum Collector-Base Voltage |Vcb| |
200 V |
Maximum Collector-Emitter Voltage |Vce| |
200 V |
Maximum Emitter-Base Voltage |Veb| |
3 V |
Maximum Collector Current |Ic max| |
0.2 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
2.7 pF |
Transition Frequency (ft): |
300 MHz |
Forward Current Transfer Ratio (hFE), MIN |
130 |
SKU |
16641 |