| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO126F |
| Manufacturer |
Sanyo Semiconductor |
| Vbr CBO |
200 |
| Vbr CEO |
200 |
| Max. PD (W) |
7.0 |
| Max. hFE |
320 |
| Min hFE |
40 |
| Ic Max. (A) |
200m |
| @Ic (test) (A) |
10m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
300M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
10 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
7 W |
| Maximum Collector-Base Voltage |Vcb| |
200 V |
| Maximum Collector-Emitter Voltage |Vce| |
200 V |
| Maximum Emitter-Base Voltage |Veb| |
3 V |
| Maximum Collector Current |Ic max| |
0.2 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
2.7 pF |
| Transition Frequency (ft): |
300 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
130 |
| SKU |
16641 |