| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO262 |
| Manufacturer |
Sanyo Semiconductor |
| Vbr CBO |
1.7k |
| Vbr CEO |
900 |
| Max. PD (W) |
1.2 |
| Max. hFE |
120 |
| Min hFE |
20 |
| Ic Max. (A) |
50m |
| @Ic (test) (A) |
2.0m |
| Icbo Max. @Vcb Max. (A) |
1.0u |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
6.0M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
1.2 W |
| Maximum Collector-Base Voltage |Vcb| |
1700 V |
| Maximum Collector-Emitter Voltage |Vce| |
900 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
2 pF |
| Transition Frequency (ft): |
6 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
344329 |