| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO236 |
| Manufacturer |
Rohm Semiconductor |
| Vbr CEO |
20 |
| Max. PD (W) |
150m |
| C(ob) (F) |
0.8p |
| hfe |
27 |
| Ic Max. (A) |
50m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
2.0G |
| @VCE (test) (V) |
10 |
| @Ic (A) |
5.0m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.1 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
2000 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
45 |
| SMD Transistor Code |
1EN |
| SKU |
344355 |