| 2SC4157 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO218 | |
| Manufacturer | Toshiba | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 100 W | |
| Maximum Collector-Base Voltage |Vcb| | 600 V | |
| Maximum Collector-Emitter Voltage |Vce| | 450 V | |
| Maximum Emitter-Base Voltage |Veb| | 8 V | |
| Maximum Collector Current |Ic max| | 10 A | |
| Max. Operating Junction Temperature (Tj) | 125 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 15 | |
| SKU | 115335 | |