The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC4165

2SC4165

SKU: 2SC4165
2SC4165 Transistor Silicon NPN CASE: SOT32 MAKE: Hitachi
Datasheet
2SC4165 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT32
Manufacturer Hitachi
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 10
Max. hFE 320
Min hFE 60
Ic Max. (A) 200m
@Ic (test) (A) 30m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Trans. Freq (Hz) Min. 130M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 344396
Back