| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO236 |
| Manufacturer |
NEC |
| Vbr CBO |
60 |
| Vbr CEO |
40 |
| Max. PD (W) |
150m |
| C(ob) (F) |
8.0p |
| t(on) Delay (S) |
30n |
| t(f) Max. (S) |
180n+ |
| hfe |
150 |
| Ic Max. (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| t(stor) Max. (S) |
150n |
| Trans. Freq (Hz) Min. |
200M |
| @VCE (test) (V) |
1.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
150m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Forward Current Transfer Ratio (hFE), MIN |
70 |
| SMD Transistor Code |
B12_B13_B14 |
| SKU |
115336 |