2SC437

SKU: 2SC437

2SC437 Transistor Silicon NPN CASE: TO8 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO8
Manufacturer	Mitsubishi
Vbr CBO	100
Vbr CEO	600m
Max. PD (W)	13
Min hFE	20
Ic Max. (A)	2.0
@Ic (test) (A)	350m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	86m
Trans. Freq (Hz) Min.	210M
Oper. Temp (°C) Max.	175
@VCE (V)	28
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	13 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	552003

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