Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
TO39 |
Vbr CBO |
120 |
Vbr CEO |
80 |
Max. PD (W) |
800m |
Derate (Amb) (W/°C) |
6.7m |
hfe |
30 |
Ic Max. (A) |
1.5 |
Icbo Max. @Vcb Max. (A) |
10u |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
20.M |
@VCE (test) (V) |
2.0 |
Oper. Temp (°C) Max. |
150 |
@Ic (A) |
200m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.8 W |
Maximum Collector-Base Voltage |Vcb| |
120 V |
Maximum Collector-Emitter Voltage |Vce| |
80 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
1.5 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
10 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
84564 |