Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
TO126 |
Vbr CBO |
70 |
Vbr CEO |
50 |
Max. PD (W) |
5.0 |
Max. hFE |
240 |
Min hFE |
40 |
Ic Max. (A) |
800m |
@Ic (test) (A) |
50m |
Icbo Max. @Vcb Max. (A) |
1.0u |
Polarity |
NPN |
R(sat) (Û) |
1.6 |
Derate Above 25°C |
50m |
Trans. Freq (Hz) Min. |
100M |
Oper. Temp (°C) Max. |
125 |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.55 W |
Maximum Collector-Base Voltage |Vcb| |
70 V |
Maximum Collector-Emitter Voltage |Vce| |
50 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.8 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Collector Capacitance (Cc) |
20 pF |
Transition Frequency (ft): |
50 MHz |
Forward Current Transfer Ratio (hFE), MIN |
40 |
SKU |
115360 |