2SC501

SKU: 2SC501

2SC501 Transistor Silicon NPN CASE: TO39 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	30
Max. PD (W)	750m
C(ob) (F)	7p
Derate (Amb) (W/°C)	5.0m
hfe	80
Ic Max. (A)	300m
Icbo Max. @Vcb Max. (A)	.10u
Polarity	NPN
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	175
@Ic (A)	10m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	25 pF
Transition Frequency (ft):	125 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	584697

Back