2SC5029
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2SC5029

SKU: 2SC5029
2SC5029 Transistor Silicon NPN CASE: DIP3 MAKE: Toshiba
Datasheet
2SC5029 Datasheet
Product specifications
Type Transistor Silicon NPN
Case DIP3
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 1100 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 4.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 35 pF
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 344896
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